IndiumV3, Main, Repository, bibRecord, 001387

The effect of addition of Al in ZrO2 thin film on its resistance to cracking

Identifieur interne : 001387 ( Main/Repository ); précédent : 001386; suivant : 001388

The effect of addition of Al in ZrO2 thin film on its resistance to cracking

Auteurs : RBID : Pascal:12-0448933

Descripteurs français

Pascal (Inist)
- Effet composition, Addition indium, Oxyde de zirconium, Couche mince, Fissuration, Propriété mécanique, Propriété optique, Pulvérisation réactive, Dépôt physique phase vapeur, Magnétron, Traitement surface, Pulvérisation irradiation.

English descriptors

KwdEn :
- Composition effect, Cracking, Indium additions, Magnetrons, Mechanical properties, Optical properties, Physical vapor deposition, Reactive sputtering, Sputtering, Surface treatments, Thin films, Zirconium oxide.

Abstract

The paper reports on the structure, mechanical and optical properties of sputtered Zr-Al-O films. The Zr-Al-O films with Zr/Al> 1 and Zr/Al<1 were prepared by a reactive sputtering using ac pulse dual magnetrons. The magnetrons were equipped with a target composed of Al plate (Ø = 50 mm) fixed to the magnetron cathode by a Zr fixing ring with inner diameter Ø_in. The content of Al in the Zr-Al-O film was controlled by Ø_in. It makes possible to control effectively the structure of the Zr-Al-O film determined by a mixture of the crystalline ZrO₂ phase and the amorphous Al₂O₃ phase. The effect of Al content on the structure, mechanical and optical properties of the Zr-Al-O film is investigated in detail. It was found that (i) the Zr-Al-O films with Zr/Al<1 are X-ray amorphous and exhibit low hardness (H ≤ 13 GPa), an effective Young's modulus E^* resulting in a low H/E^*<0.1 ratio and low elastic recovery W_e≤60 and (ii) the Zr-Al-O films with Zr/Al>1 are crystalline and exhibit high hardness (H=18 to 19 GPa), an E^* satisfying a high H/E^* ≥ 0.1 ratio, high W_e up to 78% and strongly enhanced resistance to cracking during bending even for thick films up to 5 μm.

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Pascal:12-0448933

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of addition of Al in ZrO<sub>2</sub>
 thin film on its resistance to cracking</title>
<author><name sortKey="Musil, J" uniqKey="Musil J">J. Musil</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Applied Sciences, University of West Bohemia, Univerzitní 22</s1>
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<country>République tchèque</country>
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</author>
<author><name sortKey="Sklenka, J" uniqKey="Sklenka J">J. Sklenka</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Applied Sciences, University of West Bohemia, Univerzitní 22</s1>
<s2>306 14 Plzen</s2>
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<author><name sortKey="Cerstvy, R" uniqKey="Cerstvy R">R. Cerstvy</name>
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<author><name sortKey="Suzuki, T" uniqKey="Suzuki T">T. Suzuki</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Science of Environment, Resources and Energy, Keio University, 3-14-1 Hyoshi</s1>
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<author><name sortKey="Mori, T" uniqKey="Mori T">T. Mori</name>
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<author><name sortKey="Takahashi, M" uniqKey="Takahashi M">M. Takahashi</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Composition effect</term>
<term>Cracking</term>
<term>Indium additions</term>
<term>Magnetrons</term>
<term>Mechanical properties</term>
<term>Optical properties</term>
<term>Physical vapor deposition</term>
<term>Reactive sputtering</term>
<term>Sputtering</term>
<term>Surface treatments</term>
<term>Thin films</term>
<term>Zirconium oxide</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Effet composition</term>
<term>Addition indium</term>
<term>Oxyde de zirconium</term>
<term>Couche mince</term>
<term>Fissuration</term>
<term>Propriété mécanique</term>
<term>Propriété optique</term>
<term>Pulvérisation réactive</term>
<term>Dépôt physique phase vapeur</term>
<term>Magnétron</term>
<term>Traitement surface</term>
<term>Pulvérisation irradiation</term>
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<front><div type="abstract" xml:lang="en">The paper reports on the structure, mechanical and optical properties of sputtered Zr-Al-O films. The Zr-Al-O films with Zr/Al> 1 and Zr/Al<1 were prepared by a reactive sputtering using ac pulse dual magnetrons. The magnetrons were equipped with a target composed of Al plate (Ø = 50 mm) fixed to the magnetron cathode by a Zr fixing ring with inner diameter Ø<sub>in</sub>
. The content of Al in the Zr-Al-O film was controlled by Ø<sub>in</sub>
. It makes possible to control effectively the structure of the Zr-Al-O film determined by a mixture of the crystalline ZrO<sub>2</sub>
 phase and the amorphous Al<sub>2</sub>
O<sub>3</sub>
 phase. The effect of Al content on the structure, mechanical and optical properties of the Zr-Al-O film is investigated in detail. It was found that (i) the Zr-Al-O films with Zr/Al<1 are X-ray amorphous and exhibit low hardness (H ≤ 13 GPa), an effective Young's modulus E<sup>*</sup>
 resulting in a low H/E<sup>*</sup>
<0.1 ratio and low elastic recovery W<sub>e</sub>
≤60 and (ii) the Zr-Al-O films with Zr/Al>1 are crystalline and exhibit high hardness (H=18 to 19 GPa), an E<sup>*</sup>
 satisfying a high H/E<sup>*</sup>
 ≥ 0.1 ratio, high W<sub>e</sub>
 up to 78% and strongly enhanced resistance to cracking during bending even for thick films up to 5 μm.</div>
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 thin film on its resistance to cracking</s1>
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<s2>Kohoku, Yokohama 223-8522</s2>
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. The content of Al in the Zr-Al-O film was controlled by Ø<sub>in</sub>
. It makes possible to control effectively the structure of the Zr-Al-O film determined by a mixture of the crystalline ZrO<sub>2</sub>
 phase and the amorphous Al<sub>2</sub>
O<sub>3</sub>
 phase. The effect of Al content on the structure, mechanical and optical properties of the Zr-Al-O film is investigated in detail. It was found that (i) the Zr-Al-O films with Zr/Al<1 are X-ray amorphous and exhibit low hardness (H ≤ 13 GPa), an effective Young's modulus E<sup>*</sup>
 resulting in a low H/E<sup>*</sup>
<0.1 ratio and low elastic recovery W<sub>e</sub>
≤60 and (ii) the Zr-Al-O films with Zr/Al>1 are crystalline and exhibit high hardness (H=18 to 19 GPa), an E<sup>*</sup>
 satisfying a high H/E<sup>*</sup>
 ≥ 0.1 ratio, high W<sub>e</sub>
 up to 78% and strongly enhanced resistance to cracking during bending even for thick films up to 5 μm.</s0>
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<s5>59</s5>
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<fN44 i1="01"><s1>OTO</s1>
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The effect of addition of Al in ZrO2 thin film on its resistance to cracking

The effect of addition of Al in ZrO2 thin film on its resistance to cracking

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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